用于白光 LED 的具有高吸收效率的铋激活蓝色荧光粉,Journal of Alloys and Compounds
用于白光 LED 的具有高吸收效率的铋激活蓝色荧光粉
Journal of Alloys and Compounds
(
IF
6.3
)
Pub Date : 2021-06-26
, DOI:
10.1016/j.jallcom.2021.160960
Quan Dong
1
,
Puxian Xiong
2
,
Jiaojie Yang
3
,
Yubin Fu
4
,
Weiwei Chen
1
,
Fengli Yang
3
,
Zhijun Ma
1
,
Mingying Peng
1,
2,
4
Affiliation
The China-Germany Research Center for Photonic Materials and Devices, The State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, PR China
School of Physics and Optoelectronics, The State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510640, PR China
Faculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, Ganzhou 341000, PR China
School of Applied Physics and Materials, Wuyi University, Jiangmen 529000, PR China
三价铋 (Bi 3+ ) 激活的蓝色发光材料引起了相当多的关注，因为与传统的稀土激活剂相比，它们有效地避免了重吸收缺陷。不幸的是，这些材料经常受到与近紫外 (n-UV) 芯片不匹配、蓝色发射峰短以及 n-UV 吸收效率低的困扰。在这项工作中，我们成功设计了一种蓝光荧光粉 SrZnSO:Bi 3+，其 n-UV 激发带范围从 310 到 400 nm，理想的蓝色发射带以 460 nm 为中心。此外，由于基体和 Bi 3+的强烈吸收，SrZnSO:0.03Bi 3+荧光粉表现出 73.21% 的非凡吸收效率。在 n-UV 区域。还总结了Bi 3+相关荧光粉的激发峰位置与多面体尺寸之间的关系。使用 370 nm n-UV 芯片、成分优化的样品 SrZnSO:0.03Bi 3+和商业荧光粉制造了白色发光二极管 (WLED) 。有趣的是，温度敏感的发光行为有利于 WLED 的性能改进。WLED 展示了一种暖白光，其国际照明委员会 (CIE) 坐标为 (0.3817, 0.3885)，出色的显色指数为 93.4，在 80 mA 的电流下具有 4051 K 的低相关色温。研究表明 SrZnSO:Bi 3+蓝色荧光粉在基于 LED 的应用中具有巨大潜力。也激励研究人员探索具有低能量激发带和高吸收效率的Bi 3+相关荧光粉，以开发高质量的 n-UV 泵浦 WLED。
"点击查看英文标题和摘要"
Bismuth activated blue phosphor with high absorption efficiency for white LEDs
Trivalent bismuth (Bi3+) activated blue-emitting materials have attracted considerable attention because they effectively avoid the reabsorption demerits compared to traditional rare earth activators. Unfortunately, these materials are often plagued by mismatch to the near-ultraviolet (n-UV) chip and short blue emission peak as well as low n-UV absorption efficiency. In this work, we successfully designed a blue-emitting phosphor SrZnSO:Bi3+ with a wide n-UV excitation band ranging from 310 to 400 nm and an ideal blue emission band centered at 460 nm. Furthermore, SrZnSO:0.03Bi3+ phosphor exhibits an extraordinary absorption efficiency of 73.21% ascribed to the intense absorption of the matrix and Bi3+ in the n-UV region. The relationship between the excitation peak position of Bi3+-related phosphors and the size of the polyhedron were also summarized. A white light-emitting diode (WLED) was fabricated using a 370 nm n-UV chip, the composition-optimized sample SrZnSO:0.03Bi3+ and the commercial phosphors. Interestingly, the temperature-sensitive luminescence behavior is beneficial to the performance improvement of the WLED. The WLED demonstrates a warm white light whose Commission Internationale de L′Eclairage (CIE) coordinates are (0.3817, 0.3885), outstanding color rendering index of 93.4 and low correlated color temperature of 4051 K at current of 80 mA. The study suggests that SrZnSO:Bi3+ blue emitting phosphor has great potential in LED-based applications. Also inspires researchers to explore Bi3+-related phosphors with low energy excitation band and high absorption efficiency to develop high-quality n-UV pumped WLEDs.
更新日期：2021-06-30